1999. 6. 8 1/4 semiconductor technical data kra307e~KRA309E epitaxial planar pnp transistor revision no : 0 switching application. interface circuit and driver circuit application. features with built-in bias resistors simplify circuit design reduce a quantity of parts and manufacturing process high packing density. dim millimeters a b d e esm 1.60 0.10 0.85 0.10 0.70 0.10 0.27+0.10/-0.05 1.60 0.10 1.00 0.10 0.50 0.13 0.05 c g h j 1 3 2 e b d a g h c j 1. common (emitter) 2. in (base) 3. out (collector) + _ + _ + _ + _ + _ + _ type no. r1(k u ) r2(k u ) kra307e 10 47 kra308e 22 47 KRA309E 47 22 characteristic symbol rating unit output voltage kra307e 309e v o -50 v input voltage kra307e v i -30, 6 v kra308e -40, 7 KRA309E -40, 15 output current kra307e 309e i o -100 ma power dissipation p d 100 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 type kra307e kra308e KRA309E mark ph pi pj equivalent circuit bias resistor values maximum rating (ta=25 1 ) mark spec r1 r2 common(+) out in type name marking
1999. 6. 8 2/4 kra307e~KRA309E revision no : 0 electrical characteristics (ta=25 1 ) characteristic symbol test condition min. typ. max. unit output cut-off current kra307e 309e i o(off) v o =-50v, v i =0 - - -500 na dc current gain kra307e g i v o =-5v, i o =-10ma 80 150 - kra308e 80 150 - KRA309E 70 140 - output voltage kra307e 309e v o(on) i o =-10ma, i i =-0.5ma - -0.1 -0.3 v input voltage (on) kra307e v i(on) v o =-0.2v, i o =-5ma - -1.2 -1.8 v kra308e - -1.8 -2.6 KRA309E - -3.0 -5.8 input votlage (off) kra307e v i(off) v o =-5v, i o =-0.1ma -0.5 -0.75 - v kra308e -0.6 -0.88 - KRA309E -1.5 -1.82 - transition frequency kra307e 309e f t * v o =-10v, i o =-5ma - 200 - mhz input current kra307e i i v i =-5v - - -0.88 ma kra308e - - -0.36 KRA309E - - -0.16 switching time rise time kra307e t r v o =-5v, v in =-5v r l =1k u - 0.07 - s kra308e - 0.20 - KRA309E - 0.38 - storage time kra307e t stg - 1.1 - kra308e - 1.3 - KRA309E - 0.7 - fall time kra307e t f - 0.35 - kra308e - 0.4 - KRA309E - 0.48 - note : * characteristic of transistor only.
1999. 6. 8 3/4 kra307e~KRA309E revision no : 0 i - v i(on) input on voltage v (v) i(on) input on voltage v (v) i(on) input on voltage v (v) -0.1 -0.3 -1 -3 o output current i (ma) o output current i (ma) o output current i (ma) o i(on) i - v o i(on) i - v o i(on) i(off) input on voltage v (v) o output current i ( a) i - v oi(off) i(off) input on voltage v (v) o output current i ( a) i - v oi(off) -10 -30 -100 -0.3 -0.5 -1 -3 -5 -10 -30 -50 v =-0.2v o ta=10 0 c ta=25 c ta=-25 c -25 25 100 ta=-25 c ta=25 c ta= 100 c o v =-0.2v -50 -30 -10 -5 -3 -1 -0.5 -0.3 -100 -30 -10 -3 -1 -0.3 -0.1 ta=-25 c ta=25 c ta=100 c o v =-0.2v -50 -30 -10 -5 -3 -1 -0.5 -0.3 -100 -30 -10 -3 -1 -0.3 -0.1 kra307e kra308e KRA309E o v =-5v kra308e -3k -1k -500 -300 -100 -50 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 -30 o v =-5v KRA309E -3k -1k -500 -300 -100 -50 -3.0 -2.6 -2.2 -1.8 -1.4 -1.0 -0.6 -0.2 -30 ta =10 0 c ta= 25 c ta=-25 c -3.4 ta=100 c ta=25 c ta=- 25 c i(off) input on voltage v (v) o output current i ( a) i - v oi(off) o v =-5v kra307e -3k -1k -500 -300 -100 -50 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 -30 ta=100 c ta =25 c ta =-2 5 c
1999. 6. 8 4/4 kra307e~KRA309E revision no : 0 g - i o output current i (ma) o output current i (ma) o output current i (ma) -1 -3 -10 -30 i dc current gain g i dc current gain g i dc current gain g io g - i io g - i io -100 30 50 100 300 500 1k kra307e kra308e 1k 500 300 100 50 20 v =-5v o ta=100 c ta=25 c ta=-25 c -1 -3 -10 -30 -100 1k 500 300 100 50 20 -100 -30 -10 -3 -1 KRA309E o v =-5v ta=100 c ta=25 c ta=-25 c o v =-5v ta=100 c ta=25 c ta=-25 c
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